* 100% Unclamped Inductive Switching, Test in Production
* Ensures More Reliable and Robust End Application
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* Wettable Flank for Improved Optic
DMC1018UPDWQ Datasheet (610.82 KB)
DMC1018UPDWQ
610.82 KB
Mosfet.
DMC1018UPDWQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device BVDSS
Q1
12V
Q2
-20V
RDS(ON) Max
17mΩ @ VGS = 4.5V 25mΩ @ VGS = .
📁 Related Datasheet
DMC1018UPD - MOSFET
(Diodes)
.
DMC1015UPD - MOSFET
(Diodes)
Product Summary
Device
BVDSS
Q1 12V
Q2 -20V
RDS(ON)
17mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 35mΩ @ VGS = -4.5V 55mΩ @ VGS = -2.5V
DMC1015UPD
COMPLE.
DMC1016UPD - MOSFET
(Diodes)
DMC1016UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
Features and Benefits
Device V(BR)DSS
Q1
12V
Q2
-20V
RDS(O.
DMC1017UPD - MOSFET
(Diodes)
NOT RECOMMENDED FOR NEW DESIGN USE DMC1018UPD
DMC1017UPD
Product Summary
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI®5060-8
Features and Ben.
DMC1028UFDB - MOSFET
(Diodes)
DMC1028UFDB
Product Summary
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Device
BVDSS
Q1 N-Channel
12V
Q2 P-Channel
-20V
Description
.
DMC1028UVT - MOSFET
(DIODES)
ADVANCED INFORMATION YM
DMC1028UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
Q1
N-Channel
12V
Q2 P-Channel
-20V.
DMC1029UFDB - MOSFET
(Diodes)
DMC1029UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1 N-Channel
Q2 P-Channel
BVDSS 12V -12V
RDS(ON) max
29mΩ @ VGS = 4..
DMC1030UFDB - MOSFET
(Diodes)
DMC1030UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1 N-Channel
Q2 P-Channel
BVDSS 12V -12V
RDS(ON) max
34mΩ @ VGS = 4..
