DMN2991UDR4 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

Product Summary BVDSS 20V RDS(ON) 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID TA = +25°C 0.5A 0.45A 0.37A 0.32A DM.
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

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Datasheet Specifications

Part number: DMN2991UDR4
Manufacturer: DIODES ↗
File Size: 358.31 KB
Datasheet: DMN2991UDR4-DIODES.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance
* Low Input/Output Leakage
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

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DMN2991UDR4 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMN2991UDR4-like datasheet