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DMN2991UTQ N-CHANNEL MOSFET

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Description

NEW PRODUCT DMN2991UTQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 3Ω @ VGS = 4.5V 4Ω @ VGS = 2.5V 6Ω @ VGS = 1.8V ID TA .
and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switchin.

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Features

* Low On-Resistance
* Very Low Gate Threshold Voltage, 1.0V Max
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
* Halogen an

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