DMN2991UFZQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

DMN2991UFZQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency.

📥 Download Datasheet

DMN2991UFZQ Datasheet Preview — Preview of DMN2991UFZQ PDF

Datasheet Specifications

Part number: DMN2991UFZQ
Manufacturer: DIODES ↗
File Size: 736.64 KB
Datasheet: DMN2991UFZQ-DIODES.pdf
Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low Package Profile, 0.42mm Maximum Package Height
* 0.62mm × 0.62mm Package Footprint
* Low On-Resistance
* Very Low Gate Threshold Voltage, 1.0V Maximum
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green”

Applications

* Applications
* General-purpose interfacing switches
* Power-management functions

DMN2991UFZQ Distributors

📁 Related Datasheet

DMN2990UDJ DMN2990UFA DMN2990UFZ DMN29B36G DMN29B43G DMN29B50G

📌 All Tags

DMN2991UFZQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMN2991UFZQ-like datasheet