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DMN2991UV N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2991UV Description

DMN2991UV N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V ID @TA = +25°C 0.7A 0.6A Descr.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal.

DMN2991UV Features

* Low On-Resistance
* Low Gate Threshold Voltage VGS(TH) < 1V
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface-Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant

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Datasheet Details

Part number
DMN2991UV
Manufacturer
DIODES ↗
File Size
441.86 KB
Datasheet
DMN2991UV-DIODES.pdf
Description
N-CHANNEL ENHANCEMENT MODE MOSFET

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