DMN2991UV N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

DMN2991UV N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V ID @TA = +25°C 0.7A 0.6A Descr.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal.

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Datasheet Specifications

Part number: DMN2991UV
Manufacturer: DIODES ↗
File Size: 441.86 KB
Datasheet: DMN2991UV-DIODES.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage VGS(TH) < 1V
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface-Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant

DMN2991UV Distributors

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DMN2991UV N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMN2991UV-like datasheet