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DMN2990UFA N-Channel MOSFET

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Description

NEW PRODUCT DMN2990UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ .
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high.

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Features

* Low Package Profile, 0.4mm Maximum Package height
* 0.48mm2 package footprint, 16 times smaller than SOT23
* Low On-Resistance
* Very low Gate Threshold Voltage, 1.0V max
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimon

Applications

* Applications
* General Purpose Interfacing Switch
* Power Management Functions

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