DMT10H025SSS 100V N-Channel MOSFET

DIODES

Description

DMT10H025SSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 23mΩ @ VGS = 10V 30mΩ @ VGS = 6V ID Max TA = +25°C 7.4A.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal f.

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Datasheet Specifications

Part number: DMT10H025SSS
Manufacturer: DIODES ↗
File Size: 471.07 KB
Datasheet: DMT10H025SSS-DIODES.pdf
Description: 100V N-Channel MOSFET

Features

* 100% Unclamped Inductive Switching

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* High Frequency Switching
* Synchronous Rectification

DMT10H025SSS Distributors

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DMT10H025SSS 100V N-Channel MOSFET DIODES

DIODES DMT10H025SSS-like datasheet