DIM450M1HS12-PB500 - Half Bridge IGBT
DIM450M1HS12-PB500 Features
* Trench Gate IGBT
* Cu Base with Enhanced Al2O3 Substrates
* 10µs Short Circuit Withstand
* Compact Module KEY PARAMETERS VCES VCE(sat)
* (typ) IC (max) IC(PK) (max) 1200V 1.65V 450A 900A
* Measured at the auxiliary terminals APPLICATIONS
