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MID31C TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

MID31C Description

www.DataSheet4U.com DC COMPONENTS CO., LTD.R MID31C DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descript.
Designed for use in general purpose amplifier and switching applications.

MID31C Applications

* TO-251 Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissi

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Datasheet Details

Part number
MID31C
Manufacturer
Dc Components
File Size
246.54 KB
Datasheet
MID31C_DcComponents.pdf
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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TECHNICAL SPECIFICATIONS NPN EPITAXIAL PLANAR TRANSISTOR Dc Components
Dc Components MID31C-like datasheet