DMG1023UV
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Dual p-channel mosfet.
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DMG1023UVQ - Dual P-Channel MOSFET
(DIODES)
DMG1023UVQ
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(on)
0.75Ω @ VGS = -4.5V 1.05Ω @ VGS = -2.5V
ID TA = +25°C
-1.03A
.
DMG1024UV - DUAL N-CHANNEL MOSFET
(Diodes)
NEW PRODUCT
Features
• Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low In.
DMG1026UV - DUAL N-CHANNEL MOSFET
(Diodes)
NOT RECOMMENDED FOR NEW DESIGN CONTACT US
DMG1026UV
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) 1.8Ω @ VGS = 10V.
DMG1026UVQ - 60V DUAL N-CHANNEL MOSFET
(Diodes)
NOT RECOMMENDED FOR NEW DESIGN CONTACT US
DMG1026UVQ
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON)
1.8Ω @ VGS = 10.
DMG1029SV - MOSFET
(Diodes)
NEW PRODUCT
DMG1029SV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device Q1 Q2
V(BR)DSS 60V -60V
RDS(ON) max
1.7Ω @ VGS = 10V 3Ω @.
DMG1012T - N-Channel MOSFET
(Diodes)
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up.
DMG1012T - N-Channel MOSFET
(VBsemi)
DMG1012T
DMG1012T N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.390 at VGS = 2.5 V
ID (A) c 0.8.
DMG1012UW - N-Channel MOSFET
(Diodes)
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.
DMG1013T - P-Channel MOSFET
(Diodes)
DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA =.
DMG1013TQ - 20V P-CHANNEL MOSFET
(Diodes)
DMG1013TQ
20V P-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
BVDSS -20V
RDS(ON) Max
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ .
