DMG3414UQ
297.17kb
N-channel mosfet. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo
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DMG3414U - N-Channel MOSFET
(Diodes)
DMG3414U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Low On-Resistance 25mΩ @ VGS = 4.5V 29mΩ @ VGS = 2.5V 37mΩ @ VGS = 1.8V.
DMG3413L - 20V P-Channel MOSFET
(Diodes)
NEW PRODUCT
DMG3413L
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -20V
RDS(on) max
95mΩ @ VGS = -4.5V 130mΩ @ VGS = -2.5V
ID TA.
DMG3415U - P-Channel MOSFET
(Diodes)
NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U
DMG3415U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON) max
42.5mΩ @ VGS = -4.5.
DMG3415UFY4 - P-Channel MOSFET
(Diodes)
DMG3415UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
• Low On-Resistance • 39mΩ @ VGS .
DMG3415UFY4Q - P-Channel MOSFET
(Diodes)
.
DMG3418L - N-Channel MOSFET
(Diodes)
ADAVDAVANCNECDE ID INFNFORORMAMTAITIOONN
DMG3418L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
60mΩ @ VGS = 10V 70mΩ @ .
DMG3401LSN - P-Channel MOSFET
(Diodes)
NEW PRODUCT
DMG3401LSN
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -30V
RDS(on) max
50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @.
DMG3401LSNQ - 30V P-Channel MOSFET
(DIODES)
DMG3401LSNQ
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -30V
RDS(on) max
50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V.
DMG3402L - N-Channel MOSFET
(Diodes)
DMG3402L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 30V
RDS(ON)
52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V
.
DMG3402LQ - N-Channel MOSFET
(DIODES)
DMG3402LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 30V
RDS(ON) MAX
52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = .
