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DMG4932LSD

ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMG4932LSD Features

* High Density UMOS with Schottky Barrier Diode

* Low Leakage Current at High Temp.

* High Conversion Efficiency

* Low On-Resistance

* Low Input Capacitance

* Fast Switching Speed

* Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficie

DMG4932LSD Datasheet (486.16 KB)

Preview of DMG4932LSD PDF

Datasheet Details

Part number:

DMG4932LSD

Manufacturer:

DIODES ↗

File Size:

486.16 KB

Description:

Asymetrical dual n-channel enhancement mode mosfet.

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DMG4932LSD ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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