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DMN1150UFB N-Channel MOSFET

DMN1150UFB Description

A D VNAENWC EP IRNOFDOURCMTA T I O N DMN1150UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(on) max 0.15Ω @ VGS = 4.5V 0.18.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it i.

DMN1150UFB Features

* Low On-Resistance
* Very Low Gate Threshold Voltage VGS(TH), 1.0V max
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (No

DMN1150UFB Applications

* Applications
* DC-DC Converters

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