* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
* Case: U-DFN2030-6 (Type
DMN2008LFU Datasheet (313.49 KB)
DMN2008LFU
313.49 KB
Dual n-channel mosfet.
Product Summary
BVDSS 20V
RDS(ON) Max
5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V
ID TA = +25°C
.
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Description and Appl.
