* DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
* Low RDS(ON)
* minimize conduction losses
* Low VSD
* reducing the losses due to body diode conduction
* Low Qrr
* lower Qrr of the
DMS3012SFG Datasheet (225.79 KB)
DMS3012SFG
225.79 KB
N-channel mosfet.
DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.
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