DMT10H015LPS
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N-channel mosfet. This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. T
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DMT10H015LCG - 100V N-CHANNEL MOSFET
(Diodes)
DMT10H015LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 15mΩ @ VGS = 10V 19.5mΩ @ VGS = 6V
ID Max TC = +25°C
34.
DMT10H015LFG - N-CHANNEL MOSFET
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NEW PRODUCT
Green DMT10H015LFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) max 13.5mΩ @ VGS = 10V 18mΩ @ VGS = 6..
DMT10H015LK3 - 100V N-CHANNEL MOSFET
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Green DMT10H015LK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 15mΩ @ VGS = 10V 18mΩ @ VGS = 6V
ID TC = +25°C
52.
DMT10H015LSS - N-CHANNEL MOSFET
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A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT
DMT10H015LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) Max 1.
DMT10H015SK3 - 100V N-CHANNEL MOSFET
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ADVANCED INFORMATION
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DMT10H015SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 14mΩ @ VGS = 10V 20mΩ @ VG.
DMT10H015SPS - 100V N-CHANNEL MOSFET
(DIODES)
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DMT10H015SPS
100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 100V
RDS(ON) Max 14.5mΩ @ VGS = 10V 19.5mΩ @ VGS = .
DMT10H010LCT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DMT10H010LCT
FEATURES ·Drain Current –ID= 98A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source .
DMT10H010LCT - N-CHANNEL MOSFET
(Diodes)
Green
DMT10H010LCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) 9.5mΩ @VGS = 10V
Package TO220AB
ID TC = +25°C
98A.
DMT10H010LK3 - 100V N-CHANNEL MOSFET
(Diodes)
Product Summary
BVDSS 100V
RDS(ON) Max 8.8mΩ @ VGS = 10V 11.3mΩ @ VGS = 6.0V
ID TC = +25°C
68.8A
60.7A
Green DMT10H010LK3
100V N-CHANNEL ENHANCEME.
DMT10H010LPS - N-CHANNEL MOSFET
(Diodes)
ADVANCED INFORMATION
Product Summary
Green DMT10H010LPS
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Features
BVDSS 100V
RDS(ON) Max 8.3mΩ @ VGS.