* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching
* Ensures More Reliable and Robust End Application
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* Total
DMTH6016LSDQ Datasheet (527.03 KB)
DMTH6016LSDQ
527.03 KB
Dual n-channel mosfet.
DMTH6016LSDQ 60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 19.5mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID Max TA.
📁 Related Datasheet
DMTH6016LFDFW N-CHANNEL ENHANCEMENT MODE MOSFET (DIODES)
DMTH6016LFDFWQ N-Channel MOSFET (Diodes)
DMTH6016LFVW 60V N-Channel MOSFET (DIODES)
DMTH6016LFVWQ 60V N-CHANNEL MOSFET (DIODES)
DMTH6016LK3Q 60V N-CHANNEL MOSFET (DIODES)
DMTH6016LPDQ 60V DUAL N-CHANNEL MOSFET (DIODES)
DMTH6016LPDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET (DIODES)
DMTH6016LPS 60V N-CHANNEL MOSFET (Diodes)
DMTH6016LPSQ 60V N-CHANNEL MOSFET (Diodes)
DMTH6016LPSW N-CHANNEL ENHANCEMENT MODE MOSFET (DIODES)
