DMTH6016LPDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

DMTH6016LPDW 60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 19mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID Max TC .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMTH6016LPDW
Manufacturer: DIODES ↗
File Size: 514.14 KB
Datasheet: DMTH6016LPDW-DIODES.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Engine-management systems
* Body control electronics
* DC-DC converters Mechanical Data

DMTH6016LPDW Distributors

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DMTH6016LPDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMTH6016LPDW-like datasheet