* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* High Conversion Efficiency
* Low Input Capacitance
* Fast Swi
DMTH6016LPDQ Datasheet (431.51 KB)
DMTH6016LPDQ
431.51 KB
60v dual n-channel mosfet.
DMTH6016LPDQ
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
19mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V
ID Max TC =.
📁 Related Datasheet
DMTH6016LPDW - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
(DIODES)
DMTH6016LPDW
60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max 19mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V
ID Max TC .
DMTH6016LPS - 60V N-CHANNEL MOSFET
(Diodes)
.
DMTH6016LPSQ - 60V N-CHANNEL MOSFET
(Diodes)
.
DMTH6016LPSW - N-CHANNEL ENHANCEMENT MODE MOSFET
(DIODES)
DMTH6016LPSW
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON) 16mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V
ID TC.
DMTH6016LFDFW - N-CHANNEL ENHANCEMENT MODE MOSFET
(DIODES)
ADVANCED INFORMATION
YM
DMTH6016LFDFW
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
18mΩ @ VGS = 10V 27.5mΩ @.
DMTH6016LFDFWQ - N-Channel MOSFET
(Diodes)
ADVANCED INFORMATION
DMTH6016LFDFWQ
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
18mΩ @ VGS = 10V 27.5mΩ @ V.
DMTH6016LFVW - 60V N-Channel MOSFET
(DIODES)
DMTH6016LFVW
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 60V
RDS(ON) max 16m @ VGS = 10V 27m @ VGS = 4.5V
ID.
DMTH6016LFVWQ - 60V N-CHANNEL MOSFET
(DIODES)
DMTH6016LFVWQ
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 60V
RDS(ON) max 16mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V
I.
