Datasheet4U Logo Datasheet4U.com

DFP2N60 - N-Channel MOSFET

Datasheet Summary

Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Features

  • High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ { 2. Drain BVDSS = 600V.
  • ▲.
  • RDS(ON) = 5.5 ohm ID = 2.4A 3. Source { General.

📥 Download Datasheet

Datasheet preview – DFP2N60

Datasheet Details

Part number DFP2N60
Manufacturer DnI
File Size 727.69 KB
Description N-Channel MOSFET
Datasheet download datasheet DFP2N60 Datasheet
Additional preview pages of the DFP2N60 datasheet.

📁 Similar Datasheet

  • DFP2INT - Floating Point To Integer Pipelined Converter (Digital Core Design)
  • DFP1000 - Dual output 1000 Watt AC/DC PFC front-end for distributed power architectures (Artesyn Technologies)
  • DFP14 - Thick Film Resistor Networks Flat Pack (Vishay Siliconix)
  • DFP16 - Thick Film Resistor Networks Flat Pack (Vishay Siliconix)
  • DFPADD - Floating Point Pipelined Adder Unit (Digital Core Design)
  • DFPAU - Floating Point Arithmetic Coprocessor (Digital Core Design)
  • DFPAU-DP - Floating Point Arithmetic Coprocessor Double Precision (Digital Core Design)
  • DFPCOMP - Floating Point Comparator Unit (Digital Core Design)
  • DFPDIV - Floating Point Pipelined Divider Unit (Digital Core Design)
  • DFPIC1655X - High Performance Configurable 8-bit RISC Microcontroller (Digital Core Design)
Other Datasheets by DnI

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com DFP2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ { 2. Drain BVDSS = 600V ● ▲ ● ● RDS(ON) = 5.5 ohm ID = 2.4A 3. Source { General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F PAK pkg is well suited for charger SMPS and small power inverter application.
Published: |