Datasheet4U Logo Datasheet4U.com

DFP730 - N-Channel MOSFET

Datasheet Summary

Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Features

  • 2.Drain RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 1.Gate BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A 3.Source General.

📥 Download Datasheet

Datasheet preview – DFP730

Datasheet Details

Part number DFP730
Manufacturer DnI
File Size 816.05 KB
Description N-Channel MOSFET
Datasheet download datasheet DFP730 Datasheet
Additional preview pages of the DFP730 datasheet.

📁 Similar Datasheet

  • DFP1000 - Dual output 1000 Watt AC/DC PFC front-end for distributed power architectures (Artesyn Technologies)
  • DFP14 - Thick Film Resistor Networks Flat Pack (Vishay Siliconix)
  • DFP16 - Thick Film Resistor Networks Flat Pack (Vishay Siliconix)
  • DFP2INT - Floating Point To Integer Pipelined Converter (Digital Core Design)
  • DFPADD - Floating Point Pipelined Adder Unit (Digital Core Design)
  • DFPAU - Floating Point Arithmetic Coprocessor (Digital Core Design)
  • DFPAU-DP - Floating Point Arithmetic Coprocessor Double Precision (Digital Core Design)
  • DFPCOMP - Floating Point Comparator Unit (Digital Core Design)
  • DFPDIV - Floating Point Pipelined Divider Unit (Digital Core Design)
  • DFPIC1655X - High Performance Configurable 8-bit RISC Microcontroller (Digital Core Design)
Other Datasheets by DnI

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com DFP730 N-Channel MOSFET Features ■ ■ ■ ■ ■ 2.Drain RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 1.Gate BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
Published: |