Part number:
ECP200
Manufacturer:
EIC discrete Semiconductors
File Size:
86.83 KB
Description:
2.0 watt power amplifier.
ECP200_EICdiscreteSemiconductors.pdf
Datasheet Details
Part number:
ECP200
Manufacturer:
EIC discrete Semiconductors
File Size:
86.83 KB
Description:
2.0 watt power amplifier.
ECP200, 2.0 WATT POWER AMPLIFIER
The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency.
This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process.
The devices have a 50 Ohms input impedance and pre-matched output.
It is optimized for multicarr
ECP200 Features
* 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems Packages Available QFN-16 (4x4mm)
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