ECP200

2.0 WATT POWER AMPLIFIER

EIC discrete Semiconductors

ECP200 Features

* 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems Packages Available QFN-16 (4x4mm)

ECP200 General Description

The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and pre-matched output. It is optimized for multicarr.

ECP200 Datasheet (86.83 KB)

ECP200 Datasheet Preview — Preview of ECP200 PDF

Datasheet Details

Part number:

ECP200

Manufacturer:

EIC discrete Semiconductors

File Size:

86.83 KB

Description:

2.0 watt power amplifier.

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ECP200 2.0 WATT POWER AMPLIFIER EIC discrete Semiconductors

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ECP200 Features

ECP200 General Description

Datasheet Details

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Description:

ECP200 Distributor