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EN27LN1G08 3.3V NAND Flash Memory

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Description

EN27LN1G08 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory EN27LN1G08 .
EN27LN1G08 Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.

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Datasheet Specifications

Part number
EN27LN1G08
Manufacturer
EON
File Size
879.19 KB
Datasheet
EN27LN1G08-EON.pdf
Description
3.3V NAND Flash Memory

Features

* Voltage Supply: 2.7V ~ 3.6V
* Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes
* Page Read Operation - Page Size : (2K +

Applications

* such as solid state file storage and other portable applications requiring non-volatility. Pin Configuration NC NC NC NC NC NC RY/B# RE# CE# NC NC Vcc Vss NC NC CLE ALE WE# WP# NC NC NC NC NC (TOP VIEW) (TSOPI 48L, 12mm X 20mm Body, 0.5mm Pin Pitch) 1 2 3 4 5 6 7 8 9 Standard 10 TSOP 11 12 13 14

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