EN27LN1G08 Datasheet (EON) - 3.3V NAND Flash Memory

EN27LN1G08, 3.3V NAND Flash Memory

EN27LN1G08 Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.

The device is offered in 3.3V VCC.

Its NAND cell provides the most cost effective solution for the solid state mass storage market.

A program operation can be performed in typical 200us on the 2,112-byte page and a

EN27LN1G08 Features

* Voltage Supply: 2.7V ~ 3.6V

* Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes

* Page Read Operation - Page Size : (2K +