EN27LN1G08 Datasheet, Memory, EON

✔ EN27LN1G08 Features

Voltage Supply: 2.7V ~ 3.6V
Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit
Automatic Program and Erase - Page Prog

✔ EN27LN1G08 Application

such as solid state file storage and other portable applications requiring non-volatility. Pin Configuratio

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Part number:

EN27LN1G08

Manufacturer:

EON

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📄 Datasheet

Description:

3.3v nand flash memory. EN27LN1G08 Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cel

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EN27LN1G08 3.3V NAND Flash Memory EON