EN271D-14A Datasheet, 470v, Fuji Electric

PDF File Details

Part number:

EN271D-14A

Manufacturer:

Fuji Electric

File Size:

228.02kb

Download:

📄 Datasheet

Description:

Z-trap ene(nominal varistor voltage 200 to 470v.

TAGS

EN271D-14A

Fuji Electric

📁 Related Datasheet

EN271D-10A - Z-TRAP ENE(Nominal varistor voltage 200 to 470V (Fuji Electric)
.

EN271D-05A - Z-TRAP ENE(Nominal varistor voltage 200 to 470V (Fuji Electric)
.

EN271D-07A - Z-TRAP ENE(Nominal varistor voltage 200 to 470V (Fuji Electric)
.

EN271D-20A - Z-TRAP ENE(Nominal varistor voltage 200 to 470V (Fuji Electric)
.

EN27C010 - 1Megabit EPROM (EON)
.. EN27C010 EN27C010 1Megabit EPROM (128K x 8) FEATURES • Fast Read Access Time : -45, -55, -70, and -90ns • Single 5V Power Supply.

EN27C512 - 512KBIT EPROM (EON)
.. EN27C512 EN27C512 512KBIT EPROM (64K x 8) FEATURES • Fast Read Access Time : -45, -55, -70, and -90ns • Single 5V Power Supply • .

EN27LN1G08 - 3.3V NAND Flash Memory (EON)
EN27LN1G08 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory EN27LN1G08 Features • Voltage Supply: 2.7V ~ 3.6V • Organization - Memory Cell Array : (12.

EN27LN2G08 - 3.3V NAND Flash Memory (EON)
EN27LN2G08_Preliminary EN27LN2G08 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Organization - Memory Cell A.

EN27LN4G08 - 3.3V NAND Flash Memory (EON)
EN27LN4G08 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory EN27LN4G08 Features • Voltage Supply: 2.7V ~ 3.6V • Organization - Memory Cell Array : (512.

EN27LN51208 - 3.3V NAND Flash Memory (EON)
EN27LN51208 EN27LN51208 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory 1. Features • Voltage Supply: 3.3V (2.7V ~ 3.6V ) • Organization x 8: - M.