EN27LN2G08 - 3.3V NAND Flash Memory

EON

EN27LN2G08 Datasheet Preview — Preview of EN27LN2G08 PDF

Datasheet Details

Part number	EN27LN2G08
Manufacturer	EON
File Size	3.06 MB
Description	3.3V NAND Flash Memory
Datasheet	EN27LN2G08-EON.pdf

EN27LN2G08 Product details

Description

EN27LN2G08_Preliminary The device is a 256Mx8bit with spare 16Mx8bit capacity.The device is offered in 3.3V VCC Power Supply.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.The device contains 2048 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.A program operat

Features

Voltage Supply: 2.7V ~ 3.6V.
Organization - Memory Cell Array : (256M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes.
Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Page Program Time : 250µs (Typ. ) - Block Erase Time : 2ms (Typ. ).

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Published: Aug 23, 2016 |