EN27LN51208 - 3.3V NAND Flash Memory

EON

EN27LN51208 Datasheet Preview — Preview of EN27LN51208 PDF

Datasheet Details

Part number	EN27LN51208
Manufacturer	EON
File Size	2.08 MB
Description	3.3V NAND Flash Memory
Datasheet	EN27LN51208-EON.pdf

EN27LN51208 Product details

Description

EN27LN51208 The Eon EN27LN51208 is a 64Mx8bit with spare 2Mx8bit capacity.The device is offered in 3.3V Vcc Power Supply.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.The device contains 512 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.A program operation a

Features

Voltage Supply: 3.3V (2.7V ~ 3.6V ).
Organization x 8: - Memory Cell Array : (64M + 2M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase x 8: - Page Program : (2K + 64) Byte - Block Erase : (128K + 4K) Byte.
Page Read Operation - Page Size : (2K + 64) Byte (x 8) - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Page Program Time : 300µs (Typ. ) - Block Erase.

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Published: Aug 23, 2016 |