EN27LN4G08 Datasheet - EON

EN27LN4G08 3.3V NAND Flash Memory

EN27LN4G08 The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible t.

EN27LN4G08 Features

* Voltage Supply: 2.7V ~ 3.6V

* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes

* Page Read Operation - Page Size : (2K + 64) byt

EN27LN4G08-EON.pdf