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EN27LN4G08

3.3V NAND Flash Memory

EN27LN4G08 Features

* Voltage Supply: 2.7V ~ 3.6V

* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes

* Page Read Operation - Page Size : (2K + 64) byt

EN27LN4G08 General Description

EN27LN4G08 The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible t.

EN27LN4G08 Datasheet (3.01 MB)

Preview of EN27LN4G08 PDF

Datasheet Details

Part number:

EN27LN4G08

Manufacturer:

EON

File Size:

3.01 MB

Description:

3.3v nand flash memory.

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EN27LN4G08 3.3V NAND Flash Memory EON

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