Datasheet4U Logo Datasheet4U.com

EPC2112 - Integrated Gate Driver eGaN

EPC2112 Description

EPC2112 * 200 V, 10 A Integrated Gate Driver eGaN® IC Preliminary Datasheet .
The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate.

EPC2112 Features

* Integrated Gate Driver
* Low Propagation Delay
* Up to 7 MHz Operation
* Operates from 5 V Supply
* 200 V, 40-mΩ eGaN FET
* Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9

EPC2112 Applications

* Wireless Power (Highly Resonant and Inductive)

📥 Download Datasheet

Preview of EPC2112 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
EPC2112
Manufacturer
EPC
File Size
498.58 KB
Datasheet
EPC2112-EPC.pdf
Description
Integrated Gate Driver eGaN

📁 Related Datasheet

  • EPC21.9 - EPC Cores (ACME)
  • EPC2 - Configuration Devices (Altera Corporation)
  • EPC20 - EPC Cores (ACME)
  • EPC25 - EPC Cores (ACME)
  • EPC2T32 - Configuration Devices (Altera Corporation)
  • EPC1 - Configuration Devices (Altera Corporation)
  • EPC10 - EPC Cores (ACME)
  • EPC1007H - Ethernet DC/DC Converter (PCA Electronics)

📌 All Tags

Integrated Gate Driver eGaN EPC
EPC EPC2112-like datasheet