EPC2112 Integrated Gate Driver eGaN

EPC

Description

EPC2112 * 200 V, 10 A Integrated Gate Driver eGaN® IC Preliminary Datasheet .
The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate.

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Datasheet Specifications

Part number: EPC2112
Manufacturer: EPC
File Size: 498.58 KB
Datasheet: EPC2112-EPC.pdf
Description: Integrated Gate Driver eGaN

Features

* Integrated Gate Driver
* Low Propagation Delay
* Up to 7 MHz Operation
* Operates from 5 V Supply
* 200 V, 40-mΩ eGaN FET
* Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9

Applications

* Wireless Power (Highly Resonant and Inductive)

EPC2112 Distributors

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EPC2112 Integrated Gate Driver eGaN EPC

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