Datasheet Details
- Part number
- EPC2112
- Manufacturer
- EPC
- File Size
- 498.58 KB
- Datasheet
- EPC2112-EPC.pdf
- Description
- Integrated Gate Driver eGaN
EPC2112 Description
EPC2112 * 200 V, 10 A Integrated Gate Driver eGaN® IC Preliminary Datasheet .
The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate.
EPC2112 Features
* Integrated Gate Driver
* Low Propagation Delay
* Up to 7 MHz Operation
* Operates from 5 V Supply
* 200 V, 40-mΩ eGaN FET
* Low Inductance 2.9 mm x 1.1 mm BGA
EPC2112 devices are supplied only in passivated die form with solder balls
Die Size: 2.9
EPC2112 Applications
* Wireless Power (Highly Resonant and Inductive)
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