EPC2112 Datasheet (EPC) - Integrated Gate Driver eGaN

EPC2112, Integrated Gate Driver eGaN

The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA.

The EPC2112 monolithic IC enables designers to improve efficiency, save space, and lower

EPC2112 Features

* Integrated Gate Driver

* Low Propagation Delay

* Up to 7 MHz Operation

* Operates from 5 V Supply

* 200 V, 40-mΩ eGaN FET

* Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9