EPC2111 Datasheet - EPC

EPC2111 Enhancement-Mode GaN Power Transistor Half-Bridge

eGaN® FET DATASHEET EPC2111 Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 16 A (Q2) EPC2111 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequenc.

EPC2111-EPC.pdf