Datasheet Details
- Part number
- EPC2111
- Manufacturer
- EPC
- File Size
- 2.00 MB
- Datasheet
- EPC2111-EPC.pdf
- Description
- Enhancement-Mode GaN Power Transistor Half-Bridge
EPC2111 Description
eGaN® FET DATASHEET EPC2111 * Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 1.
EPC2111 Applications
* High Frequency DC-DC
* Point-of-Load (POL) Converters
Benefits
* High Frequency Operation (up to 10 MHz)
* Low Inductance Package
* High Density Footprint
EPC
* THE LEADER IN GaN TECHNOLOGY | WWW. EPC-CO. COM | COPYRIGHT 2019 |
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eGaN® FET DA
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