EPC2111 Enhancement-Mode GaN Power Transistor Half-Bridge

EPC

Description

eGaN® FET DATASHEET EPC2111 * Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 1.

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Datasheet Specifications

Part number: EPC2111
Manufacturer: EPC
File Size: 2.00 MB
Datasheet: EPC2111-EPC.pdf
Description: Enhancement-Mode GaN Power Transistor Half-Bridge

Applications

* High Frequency DC-DC
* Point-of-Load (POL) Converters Benefits
* High Frequency Operation (up to 10 MHz)
* Low Inductance Package
* High Density Footprint EPC
* THE LEADER IN GaN TECHNOLOGY | WWW. EPC-CO. COM | COPYRIGHT 2019 | |1 eGaN® FET DA

EPC2111 Distributors

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EPC2111 Enhancement-Mode GaN Power Transistor Half-Bridge EPC

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