EPC2115 Integrated Gate Driver eGaN

EPC

Description

EPC2115 * Dual 150 V, 5 A Integrated Gate Drivers eGaN® IC Preliminary Datasheet .
The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized.

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Datasheet Specifications

Part number: EPC2115
Manufacturer: EPC
File Size: 734.78 KB
Datasheet: EPC2115-EPC.pdf
Description: Integrated Gate Driver eGaN

Features

* Integrated Gate Driver
* Low Propagation Delay
* Up to 7 MHz Operation
* Operates from 5 V Supply
* Dual 88-mΩ, 150-V eGaN FET
* Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size:

Applications

* Wireless Power (Highly Resonant and Inductive)

EPC2115 Distributors

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EPC2115 Integrated Gate Driver eGaN EPC

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