EPC2115 Datasheet - EPC

EPC2115 Integrated Gate Driver eGaN

The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package. The EPC2115 enables designers to improve efficiency, save space, and lower costs compar.

EPC2115 Features

* Integrated Gate Driver

* Low Propagation Delay

* Up to 7 MHz Operation

* Operates from 5 V Supply

* Dual 88-mΩ, 150-V eGaN FET

* Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size:

EPC2115-EPC.pdf