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M12L5121632A Synchronous DRAM

M12L5121632A Description

ESMT SDRAM M12L5121632A (2T) 8M x 16 Bit x 4 Banks Synchronous DRAM .
The device is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits.

M12L5121632A Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave )
* All inputs are sampled at the p

M12L5121632A Applications

* PIN CONFIGURATION (TOP VIEW) (TSOPII 54L, 400milX875mil Body, 0.8mm Pin Pitch) VDD 1 DQ0 2 VDDQ 3 DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 LDQM 15 W E 16 CAS 17 RAS 18 CS 19 BA0 20 BA1 21 A10/AP 22 A0 23 A1 24 A2 25 A3 26 VDD 27 54 VSS 53 DQ15 52 VSSQ 51 DQ14 50

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Datasheet Details

Part number
M12L5121632A
Manufacturer
ESMT
File Size
1.66 MB
Datasheet
M12L5121632A-ESMT.pdf
Description
Synchronous DRAM

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Synchronous DRAM ESMT
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