M14D2561616A-2.5BG2S, M14D2561616A - DDR-II SDRAM

ESMT

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M14D2561616A-2.5BG2S Datasheet Preview — This datasheet PDF includes multiple part numbers: M14D2561616A-2.5BG2S, M14D2561616A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	M14D2561616A-2.5BG2S, M14D2561616A
Manufacturer	ESMT
File Size	1.05 MB
Description	DDR-II SDRAM
Datasheet	M14D2561616A-ESMT.pdf
Note	This datasheet PDF includes multiple part numbers: M14D2561616A-2.5BG2S, M14D2561616A. Please refer to the document for exact specifications by model.

M14D2561616A-2.5BG2S Product details

Description

Ball Name A0~A12, BA0,BA1 DQ0~DQ15 RAS CAS WE VSS VDD DQS, DQS (LDQS, LDQS UDQS, UDQS ) ODT NC Function Address inputs - Row address A0~A12 - Column address A0~A8 A10/AP : Auto Precharge BA0, BA1 : Bank selects (4 Banks) Data-in/Data-out Command input Command input Command input Ground Power Bi-directional differential Data Strobe.LDQS and LDQS are DQS for DQ0~DQ7; UDQS and UDQS are DQS for DQ8~DQ15. On-Die-Termination.ODT is only applied to DQ0~DQ15, DM, DQS and DQS .No connection Ball Na

Features

JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. On-chip DLL Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition 1KB page size - Row address: A0 to A12 - Column address: A0 to A8 Quad bank operation CAS Latency : 3, 4, 5, 6, 7, 8, 9 Additive Latency: 0, 1, 2,.

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Published: Aug 18, 2025 |