M52D2561616A

Mobile Synchronous DRAM

ESMT

* 1.8V power supply

* LVCMOS compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)

* EMRS cycle with address

* All inputs are sampled at

The M52D2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous de.

M52D2561616A

ESMT

780.05 KB

Mobile synchronous dram.

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M52D2561616A Mobile Synchronous DRAM ESMT

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