M53D5121632A - Mobile DDR SDRAM

ESMT

📥 Download Datasheet

M53D5121632A Datasheet Preview — Preview of M53D5121632A PDF

Datasheet Details

Part number	M53D5121632A
Manufacturer	ESMT
File Size	1.66 MB
Description	Mobile DDR SDRAM
Datasheet	M53D5121632A-ESMT.pdf

M53D5121632A Product details

Description

Ball Name Function A0~A12, BA0~BA1 Address inputs - Row address A0~A12 - Column address A0~A9 A10/AP : AUTO Precharge BA0~BA1 : Bank selects (4 Banks) DQ0~DQ15 Data-in/Data-out RAS CAS WE VSS VDD LDQS, UDQS Row address strobe Column address strobe Write enable Ground Power Bi-directional Data Strobe.LDQS corresponds to the data on DQ0~DQ7; UDQS correspond to the data on DQ8~DQ15 Ball Name Function LDM, UDM DM is an input mask signal for write data.LDM corresponds to the data on DQ0~

Features

JEDEC Standard.
Internal pipelined double-data-rate architecture, two data access per clock cycle.
Bi-directional data strobe (DQS).
No DLL; CLK to DQS is not synchronized.
Differential clock inputs (CLK and CLK ).
Four bank operation.
CAS Latency : 2, 3.
Burst Type : Sequential and Interleave.
Burst Length : 2, 4, 8, 16.
Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature Compensated Self Refresh) - DS (Dr.

📁 M53D5121632A Similar Datasheet

M53 - Triple-Balanced Mixer (Tyco Electronics)
M5300 - JIGH RELIABILITY CURRENT REGULATOR DIODES (Microsemi)
M5301 - JIGH RELIABILITY CURRENT REGULATOR DIODES (Microsemi)
M5302 - JIGH RELIABILITY CURRENT REGULATOR DIODES (Microsemi)
M5303 - JIGH RELIABILITY CURRENT REGULATOR DIODES (Microsemi)
M5304 - JIGH RELIABILITY CURRENT REGULATOR DIODES (Microsemi)
M5305 - JIGH RELIABILITY CURRENT REGULATOR DIODES (Microsemi)
M5306 - JIGH RELIABILITY CURRENT REGULATOR DIODES (Microsemi)

Other Datasheets by ESMT

M53D5123216A - Mobile DDR SDRAM
M53D128168A - Mobile DDR SDRAM
M53D128324A - Mobile DDR SDRAM
M53D1G1664A - Mobile DDR SDRAM
M53D1G3232A - Mobile DDR SDRAM
M53D2561616A - Mobile DDR SDRAM

Published: Sep 20, 2018 |