2N5271 Datasheet (ETC) - NPN SILICON ANNULAR AVALANCHE TRANSISTOR

2N5271, NPN SILICON ANNULAR AVALANCHE TRANSISTOR

2NS271 (SILICON) NPN SILICON ANNULAR AVALANCHE TRANSISTOR ..

designed for AVALANCHE mode operation for the generation of high-current pulses with nanosecond rise times.

Ideal for applications such as laser diodes, high-current pulse generators, vacuum tube driver and other applications requiring ultra high-speed, highvoltage or high-current pulses.

Rise Time - tr = 1.0 ns,(Max) Delay Time - td = 5.0 ns (Max) Output Pulse Amplitude - Vo = 130 Vdc (Typ) @ RL = 50 Ohm