2N5557, 2N5556 Datasheet - ETC

2N5557 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) Low Input Capacitance - Ciss = 6.0 pF (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS TYPE A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total.

2N5556-ETC.pdf

2N5557 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N5557, 2N5556. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

2N5557, 2N5556

Manufacturer:

ETC

File Size:

116.08 KB

Description:

Silicon n-channel junction field-effect transistors.

Note:

This datasheet PDF includes multiple part numbers: 2N5557, 2N5556.
Please refer to the document for exact specifications by model.

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2N5557 2N5556 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS ETC

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