Part number:
GC0351P
Manufacturer:
ETC
File Size:
167.44 KB
Description:
Notebook speaker.
* plastic frame
* slim profile
* S.P. level 80 dB date 04/23/2012 page 1 of 3 RoHS SPECIFICATIONS parameter nominal size impedance resonant frequency sound pressure level response input power operation buzz, rattle, etc. magnet load test heat test humidity test RoHS condit
GC0351P
ETC
167.44 KB
Notebook speaker.
📁 Related Datasheet
GC0351P - Notebook Speaker
(ETC)
For more information, please visit the product page.
MODEL: GC0351P │ DESCRIPTION: SPEAKER
FEATURES
• plastic frame • slim profile • S.P. level 80 dB
.
GC0351P-3 - Notebook Speaker
(CUI)
PART NUMBER: GC0351P-3
SPECIFICATIONS
nominal size impedance resonant frequency sound pressure level response input power operation buzz, rattle, etc..
GC0308 - VGA CMOS Image Sensor
(GalaxyCore)
1/6.5’’ VGA GCCM0O3S08I mage Sensor
DataSheet
2010-01-28
.GalaxyCore Inc
GC0308 -- VGA CMOS Image Sensor
Content
1. Sensor Overview .
GC01L60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/09/14 REVISED DATE :
GC01L60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID.
GC02MPS12-220 - Silicon Carbide Schottky Diode
(GeneSiC)
GC02MPS12-220
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GC0401MP - speaker
(CUI)
Specifications
Nominal Size Impedance Resonant frequency Sound pressure level Response Input power Operation Buzz, rattle, etc. Magnet Load test Heat .
GC05MPS12-220 - Silicon Carbide Schottky Diode
(GeneSiC)
GC05MPS12-220
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GC05MPS12-252 - Silicon Carbide Schottky Diode
(GeneSiC)
GC05MPS12-252
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.