LP3407LT1G-ES Datasheet - ElecSuper

LP3407LT1G-ES P-channel MOSFET

The LP3407LT1G-ES is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product LP3407LT1G-ES is Pb-free. 2. Feat.

LP3407LT1G-ES Features

* 30V, RDS(ON)=46mΩ(Typ.) @VGS=-10V RDS(ON)=62mΩ(Typ.) @VGS=-4.5V

* Fast Switching

* High density cell design for low RDS(on)

* Material: Halogen free

* Reliable and rugged

* Avalanche Rated

* Low leakage current 3. Applications

* PWM applications

* Load switch

LP3407LT1G-ES-ElecSuper.pdf

LP3407LT1G-ES Datasheet Preview — Preview of LP3407LT1G-ES PDF

Datasheet Details

Part number:

LP3407LT1G-ES

Manufacturer:

ElecSuper

File Size:

828.09 KB

Description:

P-channel mosfet.

LP3407LT1G-ES Distributor

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LP3407LT1G-ES LP3407LT1G-ES P-channel MOSFET ElecSuper