* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl
LP3415ELT1G Datasheet (284.10 KB)
LP3415ELT1G
LRC
284.10 KB
P-channel mosfet.
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RD.
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