* The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. S- Prefix for Automotive and Other Applications Req uiring Uniq ue Site and Control Change Req uirements; AEC-Q101 Qualified and
LP3407LT1G Datasheet (936.34 KB)
LP3407LT1G
LRC
936.34 KB
P-channel mosfet.
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS
I D (V GS = -10V) RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V)
-30V
-4.1A < 70mΩ.
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