EM565168 512K x 16 Pseudo SRAM

Etron Technology

Description

EtronTech Rev 1.0 .
Symbol A0. A18 DQ0. DQ15 CE1# CE2 OE# WE# LB# UB# VCC VSS Function Address Inputs Data Inputs/Outputs Chip Enable Deep Power Down Ou.

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Datasheet Specifications

Part number: EM565168
Manufacturer: Etron Technology
File Size: 124.54 KB
Datasheet: EM565168_EtronTechnology.pdf
Description: 512K x 16 Pseudo SRAM

Features

* Organized as 512K words by 16 bits
* Fast Cycle Time : 55ns, 70ns
* Standby Current : 100uA
* Deep power-down Current : 10uA (Memory cell data invalid)
* Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
* Compatible with low power SRAM
* Singl

Applications

* where high speed, low power and battery backup are required. And, with a guaranteed wide operating range, the EM565168 can be used in environments exhibiting extreme temperature conditions. Pin Location Symbol Location Symbol Location Symbol Location Symbol Location Symbol A0 A3 A8 H2 A16 E4 DQ3 D5

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EM565168 512K Pseudo SRAM Etron Technology

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