EM567169BC Datasheet - Etron Technology

EM567169BC - 2M x 16 Pseudo SRAM

Symbol A0 * A20 DQ0 * DQ15 CE1# CE2 OE# WE# LB# UB# VCC/VCCQ VSS/VSSQ Function Address Inputs Data Inputs/Outputs Chip Enable Standby Mode Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground G DQ15 A19 A12 A13 WE# DQ7 H A18 A8 A9 A10 A11.

EM567169BC Features

* Organized as 2M words by 16 bits

* Fast Cycle Time : 60/65/70/85ns

* Fast Page Cycle Time : 18/20/25/30ns

* Page Read Operation by 8 words

* Standby Current(ISB1): 100uA

* Deep power-down Current : 10uA (Memory cell data invalid)

* Byte data

EM567169BC_EtronTechnology.pdf