EM567168 2M x 16 Pseudo SRAM

Etron Technology

Description

EtronTech .
Symbol A0. A20 DQ0. DQ15 CE1# CE2 OE# WE# LB# UB# VCC VSS Function Address Inputs Data Inputs/Outputs Chip Enable Deep Power Down Ou.

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Datasheet Specifications

Part number: EM567168
Manufacturer: Etron Technology
File Size: 123.55 KB
Datasheet: EM567168_EtronTechnology.pdf
Description: 2M x 16 Pseudo SRAM

Features

* Organized as 2M words by 16 bits
* Fast Cycle Time : 55ns, 70ns
* Standby Current : 100uA
* Deep power-down Current : 10uA (Memory cell data invalid)
* Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
* Compatible with low power SRAM
* Single

Applications

* where high speed, low power and battery backup are required. And, with a guaranteed wide operating range, the EM567168 can be used in environments exhibiting extreme temperature conditions. Pin Location Symbol Location Symbol Location Symbol Location Symbol Location Symbol A0 A3 A8 H2 A16 E4 DQ3 D5

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EM567168 Pseudo SRAM Etron Technology

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