EL816B - 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
The EL816 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications * Programmable controllers * System appliances, measurin
EL816B Features
* Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) (CTR: 63~320% at IF =10mA, VCE =5V)
* High isolation voltage between inputs and output (Viso=5000 V rms)
* Creepage distance >7.62 mm
* Operating temperature up to +110°C
* Compact small outline pack
