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EMB12N10H Datasheet - Excelliance MOS

EMB12N10H MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=21A, RG=25Ω L = 0.05mH Power Dissipati.

EMB12N10H Datasheet (218.31 KB)

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Datasheet Details

Part number:

EMB12N10H

Manufacturer:

Excelliance MOS

File Size:

218.31 KB

Description:

Mosfet.

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