EMB12N10VS

Part number:

EMB12N10VS

Manufacturer:

Excelliance MOS

File Size:

201.75 KB

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📄 Download EMB12N10VS Datasheet PDF

Description:

Mosfet.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V.
D RDSON (MAX.) 12mΩ ID 32A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Fr.

EMB12N10A Datasheet PDF

EMB12N10A, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 68A G UIS, Rg 100% Tested .

EMB12N10CS Datasheet PDF

EMB12N10CS, Excelliance MOS
.

EMB12N10G Datasheet PDF

EMB12N10G, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 12A G UIS, Rg .

EMB12N10H Datasheet PDF

EMB12N10H, Excelliance MOS
.

EMB12N03A Datasheet PDF

EMB12N03A, Excelliance MOS
EMB12N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 12mΩ ID 25A G UIS, Rg 10.

EMB12N03G Datasheet PDF

EMB12N03G, Excelliance MOS
EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 12mΩ ID 12A G UIS, Rg 10.

EMB12N03H Datasheet PDF

EMB12N03H, Excelliance MOS
EMB12N03H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 25A G UIS, Rg .

EMB12N03HR Datasheet PDF

EMB12N03HR, Excelliance MOS
EMB12N03HR N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 25A G UIS, Rg.

MOSFET

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