EMB12N10VS Datasheet - Excelliance MOS

EMB12N10VS MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 32A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current TC = 25 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=21A, RG=25Ω L = 0.05mH Pow.

EMB12N10VS Datasheet (201.75 KB)