EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 12mΩ ID 12A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 12 ID TC = 100 °C 10 IDM 48 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=12A, RG=2
Datasheet Details
Part number:
EMB12N03G
Manufacturer:
Excelliance MOS
File Size:
178.92 KB
Description:
N-channel logic level enhancement mode field effect transistor.