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EMB12N03G Datasheet - Excelliance MOS

EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 12mΩ ID 12A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 12 ID TC = 100 °C 10 IDM 48 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=12A, RG=2.

EMB12N03G-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB12N03G

Manufacturer:

Excelliance MOS

File Size:

178.92 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB12N03G EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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