EMB12N03HR Datasheet, Transistor, Excelliance MOS

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Part number:

EMB12N03HR

Manufacturer:

Excelliance MOS

File Size:

212.73kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor.

Datasheet Preview: EMB12N03HR 📥 Download PDF (212.73kb)
Page 2 of EMB12N03HR Page 3 of EMB12N03HR

TAGS

EMB12N03HR
N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
Excelliance MOS

📁 Related Datasheet

EMB12N03H - MOSFET (Excelliance MOS)
EMB12N03H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 25A G UIS, Rg .

EMB12N03A - MOSFET (Excelliance MOS)
EMB12N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 12mΩ ID 25A G UIS, Rg 10.

EMB12N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 12mΩ ID 12A G UIS, Rg 10.

EMB12N03V - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 18.5A G UIS, Rg 100% Test.

EMB12N03VAT - MOSFET (Excelliance MOS)
EMB12N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 9A G UIS, Rg.

EMB12N04A - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12mΩ ID 30A G UIS, Rg 100% Tested .

EMB12N04G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12mΩ ID 12A G S Pb‐Free Lead Platin.

EMB12N04V - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12.8mΩ ID 18A G UIS, Rg 100% Tested.

EMB12N06CS - N-Channel FET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 12mΩ ID 48A G UIS, Rg 100% Tested .

EMB12N06G - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 12mΩ ID 12A G S Pb‐Free Lead Platin.

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