EMB12N03H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 25A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 25 ID TC = 100 °C 20 IDM 100 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH, ID=30A, R
Datasheet Details
Part number:
EMB12N03H
Manufacturer:
Excelliance MOS
File Size:
214.79 KB
Description:
Mosfet.