EMB12N03H Datasheet - Excelliance MOS

EMB12N03H MOSFET

EMB12N03H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 25A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 25 ID TC = 100 °C 20 IDM 100 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH, ID=30A, R.

EMB12N03H Datasheet (214.79 KB)

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Datasheet Details

Part number:

EMB12N03H

Manufacturer:

Excelliance MOS

File Size:

214.79 KB

Description:

Mosfet.

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