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EMB12N03V - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

N-CH BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 30V 11.5mΩ 16.0mΩ 39A ID @TA=25℃ 9.9A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMIT

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Datasheet Details

Part number EMB12N03V
Manufacturer Excelliance MOS
File Size 364.01 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB12N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 30V 11.5mΩ 16.0mΩ 39A ID @TA=25℃ 9.9A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 39 24 Continuous Drain Current TA = 25 °C TA = 70 °C ID 9.9 7.9 Pulsed Drain Current1 IDM 70 Avalanche Current IAS 30 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH EAS 45 EAR 22.
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